Diodes Incorporated - ZXMS6006DGQTA

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ZXMS6006DGQTA by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number ZXMS6006DGQTA
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Avalanche Energy Rating (EAS): 490 mJ; Minimum Operating Temperature: -40 Cel; Package Style (Meter): SMALL OUTLINE;
Datasheet ZXMS6006DGQTA Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Pulsed Drain Current (IDM): 13 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .125 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 490 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 60 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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