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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | CSD87384MT |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 95 A; Terminal Position: BOTTOM; Transistor Element Material: SILICON; |
Datasheet | CSD87384MT Datasheet |
In Stock | 251 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Pulsed Drain Current (IDM): | 95 A |
Surface Mount: | YES |
Terminal Finish: | Nickel/Palladium/Gold (Ni/Pd/Au) |
No. of Terminals: | 5 |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY |
JESD-30 Code: | R-PBGA-B5 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | BUTT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .0089 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 231 mJ |
Maximum Feedback Capacitance (Crss): | 114 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e4 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 30 V |
Peak Reflow Temperature (C): | 260 |