Onsemi - FDMQ86530L

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FDMQ86530L by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDMQ86530L
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 22 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet FDMQ86530L Datasheet
In Stock6,516
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 28 ns
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 50 A
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD SILVER
No. of Terminals: 12
Maximum Power Dissipation (Abs): 22 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 45 ns
JESD-30 Code: R-PDSO-N12
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN SOURCE
Maximum Drain-Source On Resistance: .0175 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 15 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): 8 A
Peak Reflow Temperature (C): 260
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