Texas Instruments - CSD85312Q3E

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CSD85312Q3E by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD85312Q3E
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE;
Datasheet CSD85312Q3E Datasheet
In Stock7,287
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 76 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
No. of Terminals: 4
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N4
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Power Dissipation Ambient: 2.5 W
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 72 mJ
Maximum Feedback Capacitance (Crss): 40 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 12 A
Peak Reflow Temperature (C): 260
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