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Manufacturer | Microchip Technology |
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Manufacturer's Part Number | MSCSM170HM12CAG |
Description | N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 843 W; No. of Terminals: 12; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | MSCSM170HM12CAG Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Configuration: | COMPLEX |
Transistor Element Material: | SILICON CARBIDE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 30 pF |
Maximum Drain Current (ID): | 179 A |
Maximum Pulsed Drain Current (IDM): | 360 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Minimum Operating Temperature: | -40 Cel |
No. of Terminals: | 12 |
Minimum DS Breakdown Voltage: | 1700 V |
Maximum Power Dissipation (Abs): | 843 W |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X12 |
No. of Elements: | 4 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .015 ohm |