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Manufacturer | Fairchild Semiconductor |
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Manufacturer's Part Number | FDMS86263P |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 70 A; |
Datasheet | FDMS86263P Datasheet |
In Stock | 7,747 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 4.4 A |
Maximum Pulsed Drain Current (IDM): | 70 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
No. of Terminals: | 5 |
Maximum Power Dissipation (Abs): | 104 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F5 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .053 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 384 mJ |
JEDEC-95 Code: | MO-240AA |
Polarity or Channel Type: | P-CHANNEL |
Minimum DS Breakdown Voltage: | 150 V |
Maximum Drain Current (Abs) (ID): | 22 A |
Peak Reflow Temperature (C): | 260 |