FDH055N15A by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FDH055N15A
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 429 W; Minimum DS Breakdown Voltage: 150 V; Transistor Application: SWITCHING;
Datasheet	FDH055N15A Datasheet
In Stock	2,943

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	156 A
Maximum Pulsed Drain Current (IDM):	668 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Maximum Power Dissipation (Abs):	429 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.0059 ohm
Avalanche Energy Rating (EAS):	835 mJ
JEDEC-95 Code:	TO-247AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	150 V
Additional Features:	ULTRA-LOW RESISTANCE
Maximum Drain Current (Abs) (ID):	156 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,943	-	-

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