Vishay Intertechnology - SI7923DN-T1-GE3

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SI7923DN-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI7923DN-T1-GE3
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Maximum Pulsed Drain Current (IDM): 20 A; Package Style (Meter): SMALL OUTLINE;
Datasheet SI7923DN-T1-GE3 Datasheet
In Stock9,465
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.3 A
Maximum Pulsed Drain Current (IDM): 20 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 2.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-XDSO-C6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .047 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: SI7923DN-T1-GE3TR
SI7923DNT1GE3
SI7923DN-T1-GE3CT
SI7923DN-T1-GE3DKR
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 4.3 A
Peak Reflow Temperature (C): 260
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