SINGLE Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
3HN04MH	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1	.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.3 A
MCH6445-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W							1	4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH	4 A			1			e6
CPH3321	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1	2.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.6 A
MCH6320-TL-E	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1	3.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH	3.5 A			1			e6
6HN04S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1	.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.2 A
2SK4067(TP)	Onsemi	N-CHANNEL	SINGLE	NO	10 W						ENHANCEMENT MODE	1	8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A
MTB1N100E	Onsemi	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1	1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)	1 A						e0
NVD4C05NT4G	Onsemi	N-CHANNEL	SINGLE	YES	44 W							1	61 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			Matte Tin (Sn) - annealed	61 A			1			e3	30	260
FW216	Onsemi	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1	3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3.5 A
ATP214-TL	Onsemi	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1	75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				75 A
CPH5819	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1	1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.4 A
FDA16N50LDTU	Onsemi	N-CHANNEL	SINGLE	NO	205 W							1	16.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			MATTE TIN	16.5 A						e3
SCH1419	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1	1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A
MCH6438	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1	.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.2 A
CPH5863	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1	2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				2.5 A
MCH6421	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1	5.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5.5 A
BFL4004	Onsemi	N-CHANNEL	SINGLE	NO	36 W						ENHANCEMENT MODE	1	4.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	4.3 A
SCH1412	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1	1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.4 A
SCH1404	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1	2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.5 A
FW513TL	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						DEPLETION MODE	1	.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.35 A
MCH6436	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1	6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				6 A
2SK4066(SMP-FD)	Onsemi	N-CHANNEL	SINGLE	YES	90 W						ENHANCEMENT MODE	1	100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				100 A
MCH6421-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W							1	5.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH	5.5 A			1			e6	30	260
EMH1307-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1	6.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH	6.5 A			1			e6
MCH6336-TL-E	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1	5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Bismuth (Sn/Bi)	5 A			1			e6
NIF62514G	Onsemi	N-CHANNEL	SINGLE	YES	8.93 W						ENHANCEMENT MODE	1	6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				6 A
FSS203	Onsemi	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1	8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR					8 A
MTB6N60E	Onsemi	N-CHANNEL	SINGLE	YES	125 W						ENHANCEMENT MODE	1	6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN LEAD	6 A						e0		235
5HN01C	Onsemi	N-CHANNEL	SINGLE	YES	.25 W						ENHANCEMENT MODE	1	.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.1 A
2SK4067(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	10 W						ENHANCEMENT MODE	1	8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A
ATP108-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	60 W							1	70 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH	70 A			1			e6	30	260
3LN01S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1	.15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.15 A
3SK108R	Onsemi	N-CHANNEL	SINGLE	NO	.25 W							1	.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				.03 A
FSS275	Onsemi	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1	6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				6 A
MTD6N10E	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1	6 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel		-55 Cel	Tin/Lead (Sn/Pb)	6 A						e0
ATP216-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	40 W							1	35 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				35 A
MCH5834	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1	.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				.7 A
NVD4813NHT4G	Onsemi	N-CHANNEL	SINGLE	YES	35.3 W							1	40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			TIN	40 A			1			e3
2SK4100LS	Onsemi	N-CHANNEL	SINGLE	NO	33 W						ENHANCEMENT MODE	1	6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	6 A
FSS242	Onsemi	N-CHANNEL	SINGLE	YES	1.8 W						ENHANCEMENT MODE	1	8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A
2SK543-3	Onsemi	N-CHANNEL	SINGLE	YES	.2 W						ENHANCEMENT MODE	1	.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				.03 A
SFT1450(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	23 W						ENHANCEMENT MODE	1	21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				21 A
MCH6445-TL-W	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1	4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH	4 A			1			e6	30	260
SFT1423(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1	2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
TM3055B(TP)	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1	8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A
FSS264	Onsemi	N-CHANNEL	SINGLE	YES	2.4 W						ENHANCEMENT MODE	1	4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				4 A
NTD15N08L	Onsemi	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		SILICON		TIN LEAD		SINGLE	R-PSSO-G2		DRAIN	Not Qualified	e0
CPH3430	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1	2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.