SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TN8R04

Onsemi

N-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

3.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

3.5 A

NIF5003N

Onsemi

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

CPH3425

Onsemi

N-CHANNEL

SINGLE

YES

.9 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

MTB3N60E1

Onsemi

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

3 A

e0

MCH6401

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NIC9N05ATS1

Onsemi

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

NTP70N08

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

MCH6428

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

MLD1N06CL

Onsemi

N-CHANNEL

SINGLE

YES

40 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3LN04MH

Onsemi

N-CHANNEL

SINGLE

YES

.6 W

ENHANCEMENT MODE

1

.35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.35 A

SCH1435

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

2SK543-5

Onsemi

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

FSS207

Onsemi

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

10 A

MTW8N50E

Onsemi

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

TIN LEAD

8 A

e0

235

SFT1423(TP)

Onsemi

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

VEC2415

Onsemi

N-CHANNEL

SINGLE

YES

1 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

SFT1403(TP)

Onsemi

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

CPH3431

Onsemi

N-CHANNEL

SINGLE

YES

1 W

ENHANCEMENT MODE

1

.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.6 A

ATP206

Onsemi

N-CHANNEL

SINGLE

YES

40 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

NIC9N05TS1

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

4

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

UPPER

R-XUUC-N4

Not Qualified

260

FSS273

Onsemi

N-CHANNEL

SINGLE

YES

2.4 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

MTP6N100ERL

Onsemi

N-CHANNEL

SINGLE

YES

178 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

1HN04CH

Onsemi

N-CHANNEL

SINGLE

YES

.6 W

ENHANCEMENT MODE

1

.12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.12 A

3LN04S

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.35 A

MCH5819

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.4 A

3SK108T

Onsemi

N-CHANNEL

SINGLE

NO

.25 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

2SK4101FG

Onsemi

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

6.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6.4 A

MTD2N40ET4

Onsemi

N-CHANNEL

SINGLE

YES

40 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2 A

e0

EC4404C

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.35 A

MCH6423

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

FSS262

Onsemi

N-CHANNEL

SINGLE

YES

1.8 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

CPH5855

Onsemi

N-CHANNEL

SINGLE

YES

.9 W

ENHANCEMENT MODE

1

2.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

2.5 A

CPH5862

Onsemi

N-CHANNEL

SINGLE

YES

.9 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

2 A

3HN04SS

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.3 A

EMH1405-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

1

8.5 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

8.5 A

1

e6

3SK107G

Onsemi

N-CHANNEL

SINGLE

NO

.25 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

VEC2820

Onsemi

N-CHANNEL

SINGLE

YES

.9 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

3 A

ATP203-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

50 W

1

75 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

75 A

1

e6

MGSF3442VT3

Onsemi

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

MCH6341-TL-E

Onsemi

P-CHANNEL

SINGLE

YES

1.5 W

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

5 A

1

e6

30

260

NVD4806NT4G

Onsemi

N-CHANNEL

SINGLE

YES

68 W

1

79 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

79 A

1

e3

MCH6412

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

FTD8005

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

BMS4007

Onsemi

N-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

MCH6405

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

MCH5809

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.5 A

EC4409C

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.35 A

2SK4196LS-1E

Onsemi

N-CHANNEL

SINGLE

NO

30 W

1

5 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

5 A

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.