SINGLE Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
FQU2N90TU-AM002	Onsemi	N-CHANNEL	SINGLE	NO	50 W							1		1.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		MATTE TIN		1.7 A							e3
CPH3424	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1		1.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.8 A
ATP204	Onsemi	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1		100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				100 A
SFT1450(TP)	Onsemi	N-CHANNEL	SINGLE	NO	23 W						ENHANCEMENT MODE	1		21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				21 A
2SJ308	Onsemi	P-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	36 A		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	.48 ohm	9 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB
2SK4179GS	Onsemi	N-CHANNEL	SINGLE	NO	70 W						ENHANCEMENT MODE	1		80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				80 A
3HN04S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1		.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.3 A
NTP70N08L	Onsemi	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		SILICON	TIN LEAD			SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB	e0
NIF5003NG	Onsemi	N-CHANNEL	SINGLE	YES	1.9 W						ENHANCEMENT MODE	1					FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel
SFT1443-W	Onsemi	N-CHANNEL	SINGLE	NO	19 W						ENHANCEMENT MODE	1		9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Bismuth (Sn/Bi)		9 A							e6
ATP207-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	50 W							1		65 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		65 A			1				e6
SFT1431(TP)	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1		11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				11 A
6LN04CH	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.2 A
2SK4088LS-1E	Onsemi	N-CHANNEL	SINGLE	NO	37 W						ENHANCEMENT MODE	1		11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN		11 A							e3
SCH2806	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		1.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.2 A
BFL4037	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1		11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				11 A
2SK776	Onsemi	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1		5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5 A
BFL4036-1E	Onsemi	N-CHANNEL	SINGLE	NO	37 W							1		14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN		14 A							e3
ATP202	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1		50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				50 A
2SK4179	Onsemi	N-CHANNEL	SINGLE	NO	70 W						ENHANCEMENT MODE	1		80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				80 A
2SK4065-DL-1E	Onsemi	N-CHANNEL	SINGLE	YES	90 W							1		100 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN		100 A			1				e3	30	245
MTB3N60ET4	Onsemi	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN LEAD		3 A							e0		235
CPH5824	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1		1.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.1 A
ATP208	Onsemi	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1		90 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				90 A
CPH5803	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1		1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.5 A
2SK2634	Onsemi	N-CHANNEL	SINGLE	NO	70 W						ENHANCEMENT MODE	1		3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3.5 A
2SK3821(SMP)	Onsemi	N-CHANNEL	SINGLE	NO	65 W						ENHANCEMENT MODE	1		40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				40 A
MCH3415	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A
NVMFS5C410NLT1G	Onsemi	N-CHANNEL	SINGLE	YES	167 W							1		315 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel		Matte Tin (Sn) - annealed		315 A			1				e3	30	260
2SK2636	Onsemi	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1		7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				7 A
2SK3944	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
2SK1067-5	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1		.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				.03 A
2SK3283TP	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1		15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				15 A
2SK2171	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1		.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR					.1 A
2SK1641	Onsemi	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1		20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				20 A
2SK3249	Onsemi	N-CHANNEL	SINGLE	NO	55 W						ENHANCEMENT MODE	1		8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A
NTMFS4C03NT3G	Onsemi	N-CHANNEL	SINGLE	YES	64 W							1		136 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Matte Tin (Sn) - annealed		136 A			1				e3	30	260
FQPF2N80YDTU	Onsemi	N-CHANNEL	SINGLE	NO	35 W							1		1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		MATTE TIN		1.5 A							e3
FDBL9403-F085	Onsemi	N-CHANNEL	SINGLE	YES	357 W							1		240 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel		MATTE TIN		240 A			1				e3	30	260
2SK2044	Onsemi	N-CHANNEL	SINGLE	NO	2 W						ENHANCEMENT MODE	1		4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				4 A
2SK3750	Onsemi	N-CHANNEL	SINGLE	NO	1 W						ENHANCEMENT MODE	1		.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.3 A
CPH6444-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1		4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Bismuth (Sn/Bi)		4.5 A			1				e6
MCH3444	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.5 A
FCPF1300N80Z	Onsemi	N-CHANNEL	SINGLE	NO	24 W							1		4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Matte Tin (Sn) - annealed		4 A							e3	NOT SPECIFIED	NOT SPECIFIED
NVTFS5811NLWFTAG	Onsemi	N-CHANNEL	SINGLE	YES	21 W							1		40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel		TIN		40 A			1				e3	30	260
NVMFS4841NWFT3G	Onsemi	N-CHANNEL	SINGLE	YES	112 W						ENHANCEMENT MODE	1		89 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				89 A
NVMFS5885NLWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	54 W							1		39 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel		MATTE TIN		39 A			1				e3	30	260
3SK263	Onsemi	N-CHANNEL	SINGLE	YES								1		.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				.03 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.