SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FQU2N90TU-AM002

Onsemi

N-CHANNEL

SINGLE

NO

50 W

1

1.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

1.7 A

e3

CPH3424

Onsemi

N-CHANNEL

SINGLE

YES

1 W

ENHANCEMENT MODE

1

1.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.8 A

ATP204

Onsemi

N-CHANNEL

SINGLE

YES

60 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

100 A

SFT1450(TP)

Onsemi

N-CHANNEL

SINGLE

NO

23 W

ENHANCEMENT MODE

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

21 A

2SJ308

Onsemi

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

36 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

.48 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

2SK4179GS

Onsemi

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

80 A

3HN04S

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.3 A

NTP70N08L

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

NIF5003NG

Onsemi

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SFT1443-W

Onsemi

N-CHANNEL

SINGLE

NO

19 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

9 A

e6

ATP207-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

50 W

1

65 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

65 A

1

e6

SFT1431(TP)

Onsemi

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

6LN04CH

Onsemi

N-CHANNEL

SINGLE

YES

.6 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

2SK4088LS-1E

Onsemi

N-CHANNEL

SINGLE

NO

37 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

11 A

e3

SCH2806

Onsemi

N-CHANNEL

SINGLE

YES

.6 W

ENHANCEMENT MODE

1

1.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.2 A

BFL4037

Onsemi

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

2SK776

Onsemi

N-CHANNEL

SINGLE

NO

60 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

BFL4036-1E

Onsemi

N-CHANNEL

SINGLE

NO

37 W

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

14 A

e3

ATP202

Onsemi

N-CHANNEL

SINGLE

YES

40 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

50 A

2SK4179

Onsemi

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

80 A

2SK4065-DL-1E

Onsemi

N-CHANNEL

SINGLE

YES

90 W

1

100 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

100 A

1

e3

30

245

MTB3N60ET4

Onsemi

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

3 A

e0

235

CPH5824

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.1 A

ATP208

Onsemi

N-CHANNEL

SINGLE

YES

60 W

ENHANCEMENT MODE

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

90 A

CPH5803

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.5 A

CPH6415

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

2SK3819(SMP)

Onsemi

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

2SK3820(SMP)

Onsemi

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

26 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

26 A

2SK3817(SMP)

Onsemi

N-CHANNEL

SINGLE

NO

65 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

2SK3083

Onsemi

N-CHANNEL

SINGLE

YES

1 W

ENHANCEMENT MODE

1

.75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.75 A

3SK264-6

Onsemi

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

NVTFS5826NLWFTAG

Onsemi

N-CHANNEL

SINGLE

YES

22 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

20 A

1

e3

30

260

2SK1458LS

Onsemi

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.1 A

CPH6347-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1.6 W

1

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

6 A

1

e6

30

260

ECH8420-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

1

14 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

14 A

1

e6

30

260

ECH8410

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

2SK3066

Onsemi

N-CHANNEL

SINGLE

YES

120 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

30 A

2SK2405(SMP)

Onsemi

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

2SK3707-1E

Onsemi

N-CHANNEL

SINGLE

NO

25 W

1

20 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

20 A

e3

CPH6341-TL-E

Onsemi

P-CHANNEL

SINGLE

YES

1.6 W

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

5 A

1

e6

30

260

NTMFS4965NFT1G

Onsemi

N-CHANNEL

SINGLE

YES

22.73 W

ENHANCEMENT MODE

1

65 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

65 A

1

e3

30

260

2SK3816(SMP)

Onsemi

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

2SK2045

Onsemi

N-CHANNEL

SINGLE

NO

2 W

ENHANCEMENT MODE

1

5.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.5 A

NTD4404NT4G

Onsemi

N-CHANNEL

SINGLE

YES

78.1 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

32 A

1

e3

260

NVD5C464NLT4G

Onsemi

N-CHANNEL

SINGLE

YES

34 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

340 A

158 mJ

64 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0077 ohm

64 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

34 pF

AEC-Q101

2SK3095

Onsemi

N-CHANNEL

SINGLE

NO

25 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

5 A

2SK3618(TP-FA)

Onsemi

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

2SK3097

Onsemi

N-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

6.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

6.5 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.