SINGLE Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
2SK2748	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2 A
NVMFS5C646NLWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	79 W							1			93 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel			Matte Tin (Sn) - annealed		93 A			1				e3	30	260
2SJ652	Onsemi	P-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	112 A			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON		Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	.0555 ohm	28 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB
2SK2773	Onsemi	N-CHANNEL	SINGLE	NO	35 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					20 A
2SK3254	Onsemi	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					10 A
2SK1458	Onsemi	N-CHANNEL	SINGLE	NO	2 W						ENHANCEMENT MODE	1			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.2 A
ECH8410-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W							1			12 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Bismuth (Sn/Bi)		12 A			1				e6
CPH6444	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					4.5 A
3SK248	Onsemi	N-CHANNEL	SINGLE	YES	.2 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR							.1 A
MCH3412-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN BISMUTH		3 A			1				e6
NTTFS4H07NTWG	Onsemi	N-CHANNEL	SINGLE	YES	33.8 W							1			66 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN		66 A			1				e3	30	260
2SK3261	Onsemi	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					10 A
HUFA75852G3-F085	Onsemi	N-CHANNEL	SINGLE	NO	500 W							1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					75 A
FDPF51N25RDTU	Onsemi	N-CHANNEL	SINGLE	NO	38 W							1			51 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN		51 A							e3
CPH6442-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W							1			6 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Bismuth (Sn/Bi)		6 A			1				e6
NTMFD5C462NLT1G	Onsemi	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	311 A	174 mJ	84 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	4.7 ohm	18 A	DUAL	R-PDSO-F8	1	DRAIN			e3	30	260
2SK3820-DL-E	Onsemi	N-CHANNEL	SINGLE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	104 A	84.5 mJ	26 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.65 W	150 Cel	SILICON		Tin/Bismuth (Sn/Bi)	.08 ohm	26 A	SINGLE	R-PSIP-T3	1				e6			110 pF
NVMFS5885NLT1G	Onsemi	N-CHANNEL	SINGLE	YES	54 W							1			39 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel			MATTE TIN		39 A			1				e3	30	260
2SK1691FD	Onsemi	N-CHANNEL	SINGLE	YES	1.65 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					5 A
MCH3446	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2.5 A
NVMFS5885NLWFT3G	Onsemi	N-CHANNEL	SINGLE	YES	54 W							1			39 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel			TIN		39 A			1				e3	30	260
HUFA75639S3ST-F085A	Onsemi	N-CHANNEL	SINGLE	YES	200 W							1			56 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel			TIN		56 A			1				e3	30	245
2SK3831	Onsemi	N-CHANNEL	SINGLE	NO	100 W						ENHANCEMENT MODE	1			85 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					85 A
NCV8440ACWP	Onsemi	N-CHANNEL	SINGLE									1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
MCH3405	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel					1.8 A
CPH6428	Onsemi	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2.5 A
2SK3093	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR							3 A
2SK3833	Onsemi	N-CHANNEL	SINGLE	NO	85 W						ENHANCEMENT MODE	1			48 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					48 A
2SK3816(SMP-FD)	Onsemi	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					40 A
NTMFS5C612NL3G	Onsemi	N-CHANNEL	SINGLE	YES	139 W						ENHANCEMENT MODE	1			226 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					226 A
2SK1460	Onsemi	N-CHANNEL	SINGLE	NO	2 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					3.5 A
FDS8876-F40	Onsemi	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			12.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN		12.5 A			1				e3	30	260
2SK2634	Onsemi	N-CHANNEL	SINGLE	NO	70 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					3.5 A
2SK3821(SMP)	Onsemi	N-CHANNEL	SINGLE	NO	65 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					40 A
MCH3415	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					1.5 A
NVMFS5C410NLT1G	Onsemi	N-CHANNEL	SINGLE	YES	167 W							1			315 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel			Matte Tin (Sn) - annealed		315 A			1				e3	30	260
2SK2636	Onsemi	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					7 A
2SK3944	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2 A
2SK1067-5	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel					.03 A
2SK3283TP	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					15 A
2SK2171	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR							.1 A
2SK1641	Onsemi	N-CHANNEL	SINGLE	NO	150 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					20 A
2SK3249	Onsemi	N-CHANNEL	SINGLE	NO	55 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					8 A
NTMFS4C03NT3G	Onsemi	N-CHANNEL	SINGLE	YES	64 W							1			136 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Matte Tin (Sn) - annealed		136 A			1				e3	30	260
FQPF2N80YDTU	Onsemi	N-CHANNEL	SINGLE	NO	35 W							1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN		1.5 A							e3
FDBL9403-F085	Onsemi	N-CHANNEL	SINGLE	YES	357 W							1			240 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel			MATTE TIN		240 A			1				e3	30	260
2SK2044	Onsemi	N-CHANNEL	SINGLE	NO	2 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					4 A
2SK3750	Onsemi	N-CHANNEL	SINGLE	NO	1 W						ENHANCEMENT MODE	1			.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.3 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.