SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

2SK3978(TP)

Onsemi

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NVMFS4841NWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

112 W

1

89 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

89 A

1

e3

30

260

2SK1446

Onsemi

N-CHANNEL

SINGLE

NO

2 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

2SK3615(TP-FA)

Onsemi

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

FDPF33N25TRDTU

Onsemi

N-CHANNEL

SINGLE

NO

37 W

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

33 A

e3

2SK3702

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

72 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

.085 ohm

18 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

2SK1067

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

2SK1469FA

Onsemi

N-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

2SK2269

Onsemi

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

2SK3977(TP)

Onsemi

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

STK4NA25K

STMicroelectronics

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

K7N04FM

STMicroelectronics

N-CHANNEL

SINGLE

NO

9 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Matte Tin (Sn)

e3

SGSP466

STMicroelectronics

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

6 A

e0

STV50N06

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

50 A

STV40N10

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

40 A

STK4NA25

STMicroelectronics

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

4 A

e3

STP7N80ZFP

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

6.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

6.1 A

e3

SGSP156

STMicroelectronics

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

1.5 A

e0

STH65N06

STMicroelectronics

N-CHANNEL

SINGLE

NO

180 W

ENHANCEMENT MODE

1

65 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

65 A

STF9NK60ZFD

STMicroelectronics

N-CHANNEL

SINGLE

NO

32 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

7 A

e3

BUZ76

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

3 A

e0

STFI260N6F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

41.7 W

1

80 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

80 A

NOT SPECIFIED

NOT SPECIFIED

SGSP576

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

12 A

e0

STK18N05L

STMicroelectronics

N-CHANNEL

SINGLE

NO

60 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

18 A

e3

STF5NK52ZD

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

4.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

PD84001-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

6 W

PLASTIC/EPOXY

18 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.5 A

DUAL

R-PDSO-F4

Not Qualified

ESD PROTECTED

STV55N05L

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

SGSP562

STMicroelectronics

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

15 A

e0

PD85035S-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

95 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

8 A

DUAL

R-PDSO-F2

3

SOURCE

Not Qualified

e3

STU6N60

STMicroelectronics

N-CHANNEL

SINGLE

NO

130 W

ENHANCEMENT MODE

1

6.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

6.8 A

e3

SGSP530

STMicroelectronics

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

1.5 A

e0

SGSP511

STMicroelectronics

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

7 A

e0

STD4N20T4

STMicroelectronics

N-CHANNEL

SINGLE

YES

40 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

4 A

e3

SGSP142

STMicroelectronics

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

.6 A

e0

STH65N05

STMicroelectronics

N-CHANNEL

SINGLE

NO

180 W

ENHANCEMENT MODE

1

65 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

65 A

SGSP421

STMicroelectronics

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

10 A

e0

STU7NA60

STMicroelectronics

N-CHANNEL

SINGLE

NO

135 W

ENHANCEMENT MODE

1

7.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

7.6 A

e3

STK14N10

STMicroelectronics

N-CHANNEL

SINGLE

NO

65 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

14 A

e3

PD85035STR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

95 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

8 A

DUAL

R-PDSO-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STH265N6F6-6AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

SGSP352

STMicroelectronics

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

5 A

e0

SD1920

STMicroelectronics

N-CHANNEL

SINGLE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

14 A

STV18N20

STMicroelectronics

N-CHANNEL

SINGLE

YES

125 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

STU13N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

STV55N06L

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

SGSP154

STMicroelectronics

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

1.5 A

e0

SEF140

STMicroelectronics

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

27 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

27 A

STV60N03L10

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.