SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NVMFS5885NLT3G

Onsemi

N-CHANNEL

SINGLE

YES

54 W

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

39 A

1

e3

30

260

MTP2N20

Onsemi

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2 A

e0

2SK1847

Onsemi

N-CHANNEL

SINGLE

YES

.25 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.5 A

NTF3N08

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.14 ohm

DUAL

R-PDSO-G4

DRAIN

Not Qualified

TO-261

e0

NVMFS5826NLWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

39 W

1

26 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

26 A

1

e3

30

260

IRF720

Onsemi

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

3.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

3.3 A

e0

30

235

2SK2043

Onsemi

N-CHANNEL

SINGLE

NO

2 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

NVTFS4823NWFTWG

Onsemi

N-CHANNEL

SINGLE

YES

21 W

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

30 A

1

e3

30

260

CPH6424

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

2SK3279TP

Onsemi

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

NTTFS4H07NTAG

Onsemi

N-CHANNEL

SINGLE

YES

33.8 W

1

66 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

66 A

1

e3

30

260

2SK3487

Onsemi

N-CHANNEL

SINGLE

YES

3.5 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

2SK2268

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

2SK3099

Onsemi

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

9 A

3SK265-6

Onsemi

N-CHANNEL

SINGLE

YES

.2 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

STD110N02RT4G

Onsemi

N-CHANNEL

SINGLE

YES

110 W

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

32 A

1

e3

30

260

CPH6434

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

FDMS9411-F085

Onsemi

N-CHANNEL

SINGLE

YES

68.2 W

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

30 A

1

e3

30

260

2SK3280TP

Onsemi

N-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

MTP25N06E

Onsemi

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

25 A

e0

MCH3409

Onsemi

N-CHANNEL

SINGLE

YES

.9 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

2SK2083

Onsemi

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

5 A

NVMFS5C612NLWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

167 W

1

235 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

235 A

1

e3

30

260

ECH8309-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1.5 W

1

9.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

9.5 A

1

e6

30

260

2SK1471FA

Onsemi

N-CHANNEL

SINGLE

YES

1 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NTMFS4C09NT1G-001

Onsemi

N-CHANNEL

SINGLE

YES

25.5 W

ENHANCEMENT MODE

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

52 A

2SK3856-5

Onsemi

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

2SK3821(SMP-FD)

Onsemi

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

FDH5500-F085

Onsemi

N-CHANNEL

SINGLE

NO

375 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

75 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

MCH3421-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

.9 W

ENHANCEMENT MODE

1

.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.8 A

1

e6

2SK2405(SMP-FD)

Onsemi

N-CHANNEL

SINGLE

YES

70 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

2SK3815(SMP)

Onsemi

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

23 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

23 A

NTR4503NT3

Onsemi

N-CHANNEL

SINGLE

YES

.73 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

2 A

1

e0

235

NVMFS5C612NLT1G

Onsemi

N-CHANNEL

SINGLE

YES

167 W

1

235 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

235 A

1

e3

30

260

CPH6416

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

2SK1445

Onsemi

N-CHANNEL

SINGLE

NO

2 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

NVMFS5C604NLT3G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

1

287 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

287 A

1

e3

30

260

CPH6438

Onsemi

N-CHANNEL

SINGLE

YES

1.3 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

MCH3420

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

CPH6443-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

1

6 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

6 A

1

e6

30

260

2SK3488

Onsemi

N-CHANNEL

SINGLE

YES

3.5 W

ENHANCEMENT MODE

1

2.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.5 A

CPH6622

Onsemi

N-CHANNEL

SINGLE

YES

.9 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

NTMFS4H02NFT1G

Onsemi

N-CHANNEL

SINGLE

YES

83 W

1

193 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

193 A

1

e3

30

260

2SK3829

Onsemi

N-CHANNEL

SINGLE

NO

65 W

ENHANCEMENT MODE

1

48 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

48 A

ECH8411

Onsemi

N-CHANNEL

SINGLE

YES

1.4 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

NTMFS5C404NLT3G

Onsemi

N-CHANNEL

SINGLE

YES

167 W

1

339 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

339 A

1

e3

30

260

IRF820

Onsemi

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

2.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

2.5 A

e0

235

NVD5C464NT4G

Onsemi

N-CHANNEL

SINGLE

YES

40 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

310 A

136 mJ

59 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0058 ohm

59 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

32 pF

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.