Onsemi - STD110N02RT4G

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STD110N02RT4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number STD110N02RT4G
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
Datasheet STD110N02RT4G Datasheet
In Stock1,329
NAME DESCRIPTION
Other Names: STD110N02RT4G-VF01OSTR
ONSONSSTD110N02RT4G
STD110N02RT4G-VF01
STD110N02RT4G-VF01OSDKR-ND
STD110N02RT4G-ND
STD110N02RT4G-VF
STD110N02RT4G-VF01-ND
STD110N02RT4G-VF01OSDKR
STD110N02RT4GOSTR
STD110N02RT4GOSDKR
STD110N02RT4G-VF01OSCT
2832-STD110N02RT4G-488
STD110N02RT4G-VF01OSTR-ND
STD110N02RT4GOSCT
2832-STD110N02RT4GTR
STD110N02RT4G-VF01OSCT-ND
2156-STD110N02RT4G
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 32 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 110 W
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 32 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
1,329 $1.030 $1,368.870

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