SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

VNN3NV04TR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

7 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

1

e3

30

260

STF31N65M5

STMicroelectronics

N-CHANNEL

SINGLE

NO

30 W

1

22 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

SGSP141

STMicroelectronics

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

.6 A

e0

SGSP255

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

1.5 A

e0

STV40N05

STMicroelectronics

N-CHANNEL

SINGLE

YES

120 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

40 A

STI85NF55

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

80 A

e3

STV3NA80

STMicroelectronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

3.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.1 A

STK2NA60K

STMicroelectronics

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

1.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

1.9 A

e0

K5N07FM

STMicroelectronics

N-CHANNEL

SINGLE

NO

9 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Matte Tin (Sn)

e3

SGSP422

STMicroelectronics

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

10 A

e0

STP7NC70FP

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

6.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

6.8 A

e3

STV5NA50

STMicroelectronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

SGSP565

STMicroelectronics

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

e0

STK18N05

STMicroelectronics

N-CHANNEL

SINGLE

NO

60 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

18 A

e3

VNB28N04-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

83 W

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

28 A

3

e3

30

245

STWA88N65M5

STMicroelectronics

N-CHANNEL

SINGLE

NO

450 W

1

84 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

84 A

NOT SPECIFIED

NOT SPECIFIED

STF6N80K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

NOT SPECIFIED

NOT SPECIFIED

PD85035-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

95 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

8 A

DUAL

R-PDSO-G2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

STI400N4F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

120 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STS9P2UH7

STMicroelectronics

P-CHANNEL

SINGLE

YES

2.7 W

1

9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

NOT SPECIFIED

NOT SPECIFIED

STQ3NK50ZR

STMicroelectronics

N-CHANNEL

SINGLE

NO

3 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

STV12N20

STMicroelectronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

SGSP332

STMicroelectronics

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

3 A

e0

STRH100N6FSY01

STMicroelectronics

N-CHANNEL

SINGLE

NO

176 W

ENHANCEMENT MODE

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

80 A

VNP14NV04-1

STMicroelectronics

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

STL4NM60

STMicroelectronics

N-CHANNEL

SINGLE

YES

50 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

STV8NA50

STMicroelectronics

N-CHANNEL

SINGLE

YES

125 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

STH265N6F6-2AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STB9NK60ZFD

STMicroelectronics

N-CHANNEL

SINGLE

YES

104 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

7 A

e3

STQ1N45K3-AP

STMicroelectronics

N-CHANNEL

SINGLE

NO

2.5 W

ENHANCEMENT MODE

1

1.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.8 A

SGSP532

STMicroelectronics

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

3 A

e0

STB95N4F3

STMicroelectronics

N-CHANNEL

SINGLE

YES

110 W

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

80 A

1

e3

30

245

STK4N30L

STMicroelectronics

N-CHANNEL

SINGLE

NO

60 W

ENHANCEMENT MODE

1

4.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

4.2 A

e3

STQ1NC45R

STMicroelectronics

N-CHANNEL

SINGLE

NO

3.1 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

.5 A

e3

STWA36NM60ND

STMicroelectronics

N-CHANNEL

SINGLE

NO

190 W

1

29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

29 A

e3

STF7N80K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

6 A

e3

SGSP151

STMicroelectronics

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

5 A

e0

STD4NB25

STMicroelectronics

N-CHANNEL

SINGLE

YES

40 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

4 A

e3

STU5NA90

STMicroelectronics

N-CHANNEL

SINGLE

NO

135 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

5 A

e3

LET90015

STMicroelectronics

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

2 A

STV7NA40

STMicroelectronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

6.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6.5 A

STH45N10FI

STMicroelectronics

N-CHANNEL

SINGLE

NO

60 W

ENHANCEMENT MODE

1

27 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

27 A

VNV28N04TR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

83 W

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

28 A

3

e3

30

250

STFI13N80K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

35 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

NOT SPECIFIED

NOT SPECIFIED

STV10NA40

STMicroelectronics

N-CHANNEL

SINGLE

YES

125 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

STV7NA60

STMicroelectronics

N-CHANNEL

SINGLE

YES

125 W

ENHANCEMENT MODE

1

7.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7.2 A

STFI6N80K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

NOT SPECIFIED

NOT SPECIFIED

STL62P3LLH6

STMicroelectronics

P-CHANNEL

SINGLE

YES

100 W

1

62 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

62 A

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.