SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STP13N10

STMicroelectronics

N-CHANNEL

SINGLE

NO

80 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

13 A

e3

STP53N06

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

53 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

53 A

e3

STP13NM60N-H

STMicroelectronics

N-CHANNEL

SINGLE

NO

90 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

11 A

e3

STL18N65M2

STMicroelectronics

N-CHANNEL

SINGLE

YES

57 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

NOT SPECIFIED

NOT SPECIFIED

STF12NM50ND

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

350 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.38 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STD30NF04LT

STMicroelectronics

N-CHANNEL

SINGLE

YES

50 W

1

30 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

30 A

1

e3

260

STP60NE06-16FI

STMicroelectronics

N-CHANNEL

SINGLE

NO

45 W

ENHANCEMENT MODE

1

35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

35 A

e3

STB130NS04ZB

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

ENHANCEMENT MODE

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

80 A

STD10N10-1

STMicroelectronics

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

10 A

STW12NK60Z

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

10 A

e3

STP3NC90Z-1

STMicroelectronics

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

3.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

3.5 A

e0

STW56N60M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

350 W

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

52 A

NOT SPECIFIED

NOT SPECIFIED

STW56N65M2-4

STMicroelectronics

N-CHANNEL

SINGLE

NO

358 W

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

49 A

NOT SPECIFIED

NOT SPECIFIED

STB11NB40

STMicroelectronics

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

STB200NF04

STMicroelectronics

N-CHANNEL

SINGLE

YES

310 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

STH175N4F6-6AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STF40N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

32 A

NOT SPECIFIED

NOT SPECIFIED

STD22NM20N

STMicroelectronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

STF4LNK60Z

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

STD20N06-1

STMicroelectronics

N-CHANNEL

SINGLE

NO

60 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

20 A

STP6N50

STMicroelectronics

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

6 A

e3

STP50N05L

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

50 A

e3

STP31N65M5

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

1

22 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

STL120N4F6AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

96 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

120 A

1

e3

260

STP160N4LF6

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STW55N10

STMicroelectronics

N-CHANNEL

SINGLE

NO

200 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

55 A

e3

STP6N50FI

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

3.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

3.8 A

e3

STD52P3LLH6

STMicroelectronics

P-CHANNEL

SINGLE

YES

70 W

1

52 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

52 A

NOT SPECIFIED

NOT SPECIFIED

STD20N06T4

STMicroelectronics

N-CHANNEL

SINGLE

YES

60 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

20 A

e3

STH180N10F3-6

STMicroelectronics

N-CHANNEL

SINGLE

YES

315 W

1

180 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

STP11N06

STMicroelectronics

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

11 A

e3

STW16NA40FI

STMicroelectronics

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

STP90NF03L-1

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

STD20N06

STMicroelectronics

N-CHANNEL

SINGLE

YES

60 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

20 A

e3

STB80NF06

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

ENHANCEMENT MODE

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

80 A

STP80NF03L-04T4

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

ENHANCEMENT MODE

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

80 A

e3

STD10N10L1

STMicroelectronics

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

10 A

STF18N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

NOT SPECIFIED

NOT SPECIFIED

STP1N105K3

STMicroelectronics

N-CHANNEL

SINGLE

NO

60 W

1

1.4 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.4 A

STP100N8F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

176 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

NOT SPECIFIED

NOT SPECIFIED

STH360N4F6-2

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

STP400N4F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

120 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STI12NM50N

STMicroelectronics

N-CHANNEL

SINGLE

NO

100 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

11 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

STD130N4F6AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

143 W

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

80 A

1

e3

260

STP2N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

60 W

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

NOT SPECIFIED

NOT SPECIFIED

STP80NF04

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

80 A

e3

STH110N10F7-6

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

BLF2425M8LS140U

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.