SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

MRF9060S

NXP Semiconductors

N-CHANNEL

SINGLE

219 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

BUK436-60A

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.028 ohm

50 A

SINGLE

R-PSFM-T3

Not Qualified

BLF7G20LS-200,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK416-100AE

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

100 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

1

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.013 ohm

110 A

UPPER

R-PUFM-D4

Not Qualified

BLF7G22L-130,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

28 A

BLF7G24LS-140,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

28 A

BLF2425M7LS140,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

BUK416-200AE

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

200 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

1

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 ohm

63 A

UPPER

R-PUFM-D4

Not Qualified

BLF7G24LS-100,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

28 A

PZFJ108-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

4

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

8 ohm

DUAL

R-PDSO-G4

GATE

Not Qualified

15 pF

BUK483-60ATRL

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

3.2 A

DUAL

R-PDSO-G4

Not Qualified

BUK436-1000B

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

3.1 A

SINGLE

R-PSFM-T3

Not Qualified

BLP25M705Z

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

BLF2425M7L140,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

BUK551-100A

NXP Semiconductors

N-CHANNEL

SINGLE

NO

40 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.85 ohm

3 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

BLF2043,135

NXP Semiconductors

N-CHANNEL

SINGLE

1

2.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

2.2 A

PMXB65ENEZ

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

3.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.2 A

BLS7G2729LS-350P,1

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

33 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

33 A

BLF1822-10,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

2.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

2.2 A

BLF2425M7L140,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

PMPB95ENEAX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

15.6 W

ENHANCEMENT MODE

1

2.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.8 A

BLF7G27LS-100,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

28 A

PHK12NQ03LT,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

12 A

2

e4

30

260

BLF2425M8LS140J

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BLS6G2735L-30,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

30

260

BLL6H0514L-130,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

18 A

30

260

PHD18NQ10T,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

79 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

18 A

BUK436-800B

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

4 ohm

3.5 A

SINGLE

R-PSFM-T3

Not Qualified

PMPB13XNE,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

12.5 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8 A

1

e3

30

260

BUK436-100B

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.065 ohm

31 A

SINGLE

R-PSFM-T3

Not Qualified

BLF7G22LS-200,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

PZFJ110-TAPE-13

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

4

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

18 ohm

DUAL

R-PDSO-G4

GATE

Not Qualified

15 pF

BLS7G2729L-350P,11

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

33 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

33 A

BLS6G2933S-130,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

33 A

30

280

BUK436-200B

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.2 ohm

17 A

SINGLE

R-PSFM-T3

Not Qualified

BLS6G2731S-130,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

33 A

30

280

PMXB40UNEZ

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

3.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.2 A

PHK18NQ03LT,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

6.25 W

ENHANCEMENT MODE

1

20.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

20.3 A

2

e4

30

260

BLF7G10LS-250,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

56 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

56 A

BUK417-500BE

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

500 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

1

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.16 ohm

28 A

UPPER

R-PUFM-D4

Not Qualified

BLF7G22LS-200,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

BLD6G21LS-50,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

10.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

10.2 A

30

260

BLF7G15LS-200,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

56 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

56 A

BLS7G2933S-150,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

33 A

30

280

BLF7G20L-200,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BLF7G22L-160,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

36 A

933817070112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

ROUND

ENHANCEMENT MODE

1

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.75 ohm

6 A

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BLF7G22L-200,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.