NXP Semiconductors - BLD6G21LS-50,112

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BLD6G21LS-50,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLD6G21LS-50,112
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; Maximum Drain Current (ID): 10.2 A;
Datasheet BLD6G21LS-50,112 Datasheet
In Stock1,813
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 10.2 A
Maximum Drain Current (Abs) (ID): 10.2 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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