NXP Semiconductors - PMXB65ENEZ

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PMXB65ENEZ by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMXB65ENEZ
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.33 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 3.2 A;
Datasheet PMXB65ENEZ Datasheet
In Stock4,547
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 8.33 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3.2 A
Maximum Drain Current (Abs) (ID): 3.2 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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Pricing (USD)

Qty. Unit Price Ext. Price
4,547 $0.059 $268.273

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