SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PSMN012-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

26 W

ENHANCEMENT MODE

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

33 A

1

e3

30

260

BLF8G22LS-200V,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

30

260

PSMN013-30LL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

41 W

ENHANCEMENT MODE

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

21 A

BLF8G22LS-270V,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

30

260

BUK6207-30C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

128 W

ENHANCEMENT MODE

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

BLF6G27-45,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

BUK9614-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

96 W

ENHANCEMENT MODE

1

56 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

56 A

1

e3

30

245

BF1118,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

DEPLETION MODE

1

.01 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.01 A

1

e3

30

260

BLF6G13L-250

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.169 ohm

42 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

ESD PROTECTION

PSMN006-20K,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.3 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

32 A

2

e4

30

260

PSMN3R8-30LL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

69 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

BUK7109-75AIE/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

272 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

BLF8G27LS-150VQ

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BF1101WR,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

.03 A

e3

BLF6G27LS-75,112

NXP Semiconductors

N-CHANNEL

SINGLE

75 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

18 A

BUK7E2R6-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

349 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

BLF6G38-10G/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

3.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

3.1 A

BUK624R5-30C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

158 W

ENHANCEMENT MODE

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

90 A

1

e3

30

260

BUK9Y58-75B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

60.4 W

ENHANCEMENT MODE

1

20.73 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

20.73 A

1

e3

30

260

BLF8G27LS-150VJ

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

PSMN1R7-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

164 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN013-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

26 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

32 A

1

e3

30

260

BUK7E2R3-40E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

293 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

BUK9Y21-40E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

33 A

1

e3

30

260

BUK965R4-40E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

137 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

BUK764R2-80E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

324 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BLF8G10LS-160,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

BLF6G38-100,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

34 A

BUK7Y29-40EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

37 W

ENHANCEMENT MODE

1

26 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

26 A

BUK764R0-75C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

333 W

ENHANCEMENT MODE

1

199 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

199 A

1

e3

30

245

BUK9Y11-80EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

194 W

ENHANCEMENT MODE

1

84 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

84 A

PSMN8R3-40YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

74 W

ENHANCEMENT MODE

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

70 A

1

e3

30

260

BUK6507-75C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

204 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

e3

PSMN6R0-30YLB,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

58 W

ENHANCEMENT MODE

1

71 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

71 A

1

e3

30

260

BLF6H10L-160,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

BLF8G27LS-150GVQ

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK9Y15-100E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

195 W

ENHANCEMENT MODE

1

69 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

69 A

1

e3

30

260

BUK9E04-40A,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

75 A

e3

BUK6E3R4-40C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

204 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

e3

BLF8G24LS-150VU

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BLF8G10LS-160V,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

1

30

260

PSMN5R0-100PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

338 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

BUK9Y72-80E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

15 A

1

e3

30

260

BUK956R1-100E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

349 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

e3

BUK9219-55A/C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

114 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

BF1100R,235

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

.03 A

e3

PSMN013-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

48.4 W

ENHANCEMENT MODE

1

35.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

35.2 A

BUK962R8-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

324 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.