SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK7Y28-75B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

85 W

ENHANCEMENT MODE

1

35.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

35.5 A

1

e3

30

260

BUK6246-75C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

60 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

22 A

1

e3

30

260

BUK7E4R6-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

234 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

e3

PSMN013-80YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

60 A

1

e3

30

260

BUK9Y65-100E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

64 W

ENHANCEMENT MODE

1

19 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

19 A

1

e3

30

260

BUK963R1-40E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

234 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BUK7509-75

NXP Semiconductors

N-CHANNEL

SINGLE

NO

230 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

75 A

BUK638-500B

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.6 ohm

12.5 A

SINGLE

R-PSFM-T3

Not Qualified

PSMN6R0-25YLB,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

58 W

ENHANCEMENT MODE

1

73 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

73 A

1

e3

30

260

BUK763R9-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

263 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BUK9275-100A/C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

21.7 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

21.7 A

PSMN9R5-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

34 W

ENHANCEMENT MODE

1

44 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

44 A

1

e3

30

260

PSMN085-150K,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

3.5 W

ENHANCEMENT MODE

1

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

2

e4

30

260

BUK6217-55C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

80 W

ENHANCEMENT MODE

1

44 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

44 A

1

e3

30

260

BLF8G24LS-100GVQ

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

PSMN3R2-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

92 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

BLF6G10LS-160RN,11

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

39 A

BLF8G24LS-100GVJ

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BLF8G09LS-270GWQ

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SI4410DY,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

10 A

2

e4

30

260

BUK9C10-65BIT,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

171 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

75 A

1

e3

30

245

BUK7E8R3-40E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

96 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

75 A

e3

BUK753R8-80E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

349 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

BF1118WR,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

DEPLETION MODE

1

.01 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.01 A

1

e3

30

260

PSMN015-60PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

86 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

50 A

e3

BLF6G10-200RN,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

49 A

BLF8G24LS-100VJ

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK9Y12-55B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

61.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

61.8 A

1

e3

30

260

BUK6213-30C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

60 W

ENHANCEMENT MODE

1

47 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

47 A

1

e3

30

260

BF1108,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

DEPLETION MODE

1

.01 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.01 A

1

e3

30

260

BUK9Y40-55BT/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

59 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

18 A

PSMN2R9-30MLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

91 W

ENHANCEMENT MODE

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

70 A

1

e3

30

260

PSMN014-60LS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

PSMN7R6-60PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

149 W

ENHANCEMENT MODE

1

92 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

92 A

e3

PSMN6R1-30YLDX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

47 W

ENHANCEMENT MODE

1

66 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

66 A

BUK7Y25-80EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

95 W

ENHANCEMENT MODE

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

39 A

PSMN017-30BL,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

47 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

32 A

1

e3

30

245

BLF8G22LS-140J

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BLF6G13LS-250

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.169 ohm

42 A

DUAL

R-CDFM-F2

SOURCE

Not Qualified

ESD PROTECTION

BLF6G38-50,135

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

16.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

16.5 A

BUK7631-100E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

96 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

34 A

1

e3

30

245

BUK6E4R0-75C,127

NXP Semiconductors

N-CHANNEL

SINGLE

YES

306 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

e3

PSMN8R5-100PSQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

263 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

PSMN4R3-80ES,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

306 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

PSMN3R7-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

79 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

BLF8G10LS-160V,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

1

30

260

PSMN9R0-30LL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

50 W

ENHANCEMENT MODE

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

21 A

PSMN038-100YLX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

94.9 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

30 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.