NXP Semiconductors - BLF8G24LS-100VJ

  1. Home
  2. NXP Semiconductors - BLF8G24LS-100VJ
BLF8G24LS-100VJ by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF8G24LS-100VJ
Description N-CHANNEL; Configuration: SINGLE; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 225 Cel;
Datasheet BLF8G24LS-100VJ Datasheet
In Stock1,945
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 225 Cel
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,945 - -

Popular Products

Category Top Products

IRF7404TRPBF by International Rectifier

IRF7404TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Feedback Capacitance (Crss): 340 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF9540NPBF by Infineon Technologies

IRF9540NPBF

Infineon Technologies

IRF9540NPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 76A Max Pulsed Drain Current, 430mJ Avalanche Energy Rating, and 0.117 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 175°C, making it suitable for high-power circuits.
IRFR3710ZTRPBF by International Rectifier

IRFR3710ZTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Drain Current (Abs) (ID): 42 A; Case Connection: DRAIN;
BSP315PH6327 by Infineon Technologies

BSP315PH6327

Infineon Technologies

Infineon's BSP315PH6327 is a P-CHANNEL FET with 60V DS Breakdown Voltage and 4.68A IDM. Ideal for automotive applications, it features a built-in diode, 0.8 ohm RDS(on), and 24mJ EAS rating. AEC-Q101 compliant, this MOSFET has a small outline package and matte tin finish for enhanced performance in harsh environments.
FDS4935A by Onsemi

FDS4935A

Onsemi

FDS4935A by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 30V. It has a max drain current of 7A and a max drain-source on resistance of 0.023 ohm. This transistor is commonly used for switching applications in various electronic devices.
IRF3710STRLPBF by International Rectifier

IRF3710STRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; JESD-30 Code: R-PSSO-G2;
FDP20N50F by Onsemi

FDP20N50F

Onsemi

FDP20N50F by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 1110mJ EAS, and 0.26 ohm RDS(on). With a max power dissipation of 250W and operating temperature of 150°C, it's suitable for high-power circuits requiring efficient switching capabilities.
IRF640 by Samsung

IRF640

Samsung

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 140 ns; Transistor Application: SWITCHING;
BSZ067N06LS3GATMA1 by Infineon Technologies

BSZ067N06LS3GATMA1

Infineon Technologies

Infineon BSZ067N06LS3GATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 118mJ EAS, and 0.0121 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and DUAL terminal position for efficient power management.
IRFB4227PBF by Infineon Technologies

IRFB4227PBF

Infineon Technologies

IRFB4227PBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM and 0.024 ohm RDS(on), operating in ENHANCEMENT MODE. With a max power dissipation of 330W, it is suitable for high-power electronic systems.
FDD5614P by Fairchild Semiconductor

FDD5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
BSC028N06NSTATMA1 by Infineon Technologies

BSC028N06NSTATMA1

Infineon Technologies

BSC028N06NSTATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.0028 ohm max RDS(on), and 400A IDM. It's used for switching applications due to its built-in diode, small outline package style, and high pulsed drain current capacity.
JANTX2N6796 by Omnirel

JANTX2N6796

Omnirel

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; JESD-30 Code: O-MBCY-W3; Terminal Finish: Tin/Lead (Sn/Pb);
NTMFS5C604NLT1G by Onsemi

NTMFS5C604NLT1G

Onsemi

NTMFS5C604NLT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 900A IDM, and 0.0017 ohm RDS(on). It is used in power applications due to its 200W max power dissipation, -55 to 175 °C operating temp range, and built-in diode configuration.
IRFP250NPBF by International Rectifier

IRFP250NPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Drain Current (ID): 30 A; No. of Terminals: 3;
SI7145DP-T1-GE3 by Vishay Intertechnology

SI7145DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7145DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 100A and EAS of 125mJ, this MOSFET operates in ENHANCEMENT MODE. With 0.0026 ohm RDS(on), it can handle up to 104W power dissipation at 150°C.
BSC340N08NS3GATMA1 by Infineon Technologies

BSC340N08NS3GATMA1

Infineon Technologies

Infineon's BSC340N08NS3GATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 92A IDM, 20mJ EAS, and 0.034 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a max power dissipation of 32W in a small outline package.
SIR872ADP-T1-GE3 by Vishay Intertechnology

SIR872ADP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIR872ADP-T1-GE3 is a N-channel FET with 150V DS breakdown voltage and 100A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.018 ohm max drain-source resistance, and operates in enhancement mode.
AUIRF3205Z by Infineon Technologies

AUIRF3205Z

Infineon Technologies

AUIRF3205Z by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 440A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0065 ohm RDS(on), and 170W Pdiss. Operating in ENHANCEMENT MODE, it has a max temp of 175°C and EAS of 250mJ.
IRFP460APBF by Vishay Intertechnology

IRFP460APBF

Vishay Intertechnology

Vishay Intertechnology's IRFP460APBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 280W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.