
Image shown is a representation only.
Manufacturer | NXP Semiconductors |
---|---|
Manufacturer's Part Number | BLF6G38-50,135 |
Description | N-CHANNEL; Configuration: SINGLE; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 16.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | BLF6G38-50,135 Datasheet |
NAME | DESCRIPTION |
---|---|
Configuration: | SINGLE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
No. of Elements: | 1 |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 200 Cel |
Maximum Drain Current (ID): | 16.5 A |
Maximum Drain Current (Abs) (ID): | 16.5 A |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |