SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PSMN8R5-100XSQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

55 W

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

49 A

PSMN8R0-40BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

86 W

ENHANCEMENT MODE

1

77 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

77 A

1

e3

30

245

BLF8G22LS-200GV,12

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

PSMN7R8-120PSQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

349 W

ENHANCEMENT MODE

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70 A

BUK9515-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

96 W

ENHANCEMENT MODE

1

54 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

54 A

e3

BUK7880-55A,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

7 A

1

e3

30

260

PSMN9R1-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

52 W

ENHANCEMENT MODE

1

57 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

57 A

1

e3

30

260

PSMN7R0-40LS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

PSMN013-100PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

170 W

ENHANCEMENT MODE

1

67 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

67 A

1

e3

PSMN016-100PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

148 W

ENHANCEMENT MODE

1

96 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

96 A

e3

BUK7514-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

96 W

ENHANCEMENT MODE

1

58 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

58 A

e3

PMZB380XN,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

.93 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.93 A

1

e3

30

260

BUK7C06-40AITE/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

272 W

ENHANCEMENT MODE

1

155 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

155 A

BUK661R6-30C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

306 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

PSMN1R1-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

NO

215 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN027-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

41.1 W

ENHANCEMENT MODE

1

23.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

23.4 A

BLF6G20-180RN,112

NXP Semiconductors

N-CHANNEL

SINGLE

NO

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

49 A

PSMN8R0-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

56 W

ENHANCEMENT MODE

1

62 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

62 A

1

e3

30

260

BUK964R1-40E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

182 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

BUK664R8-75C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

262 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

PMV185XN,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1.275 W

ENHANCEMENT MODE

1

1.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.1 A

BUK763R4-30B,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

255 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

BLF6G27-100,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

29 A

BLF8G27LS-140V,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

PSMN3R7-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

64 W

ENHANCEMENT MODE

1

97 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

97 A

1

e3

30

260

BLF6G38-100,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

34 A

BUK9E08-55B,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

203 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

110 A

e3

PSMN5R9-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

63 W

ENHANCEMENT MODE

1

78 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

78 A

1

e3

30

260

NX3020NAKT,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.285 W

ENHANCEMENT MODE

1

.18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.18 A

1

e3

30

260

PSMN9R0-25MLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

55 A

1

e3

30

260

PSMN4R5-40BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

148 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BLF6G38S-25,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

8.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

8.2 A

BLF6G15L-40RN,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

11 A

30

260

BUK7222-55A/C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

103 W

ENHANCEMENT MODE

1

48 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

48 A

BUK7Y08-40B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

105 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

260

PSMN035-100LS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

27 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

27 A

BUK7E1R9-40E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

324 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

BUK765R3-40E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

137 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

BLF8G24LS-150GVQ

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK6240-75C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

60 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

22 A

PMV170UN,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1.14 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

1 A

1

e3

30

260

BUK6207-55C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

158 W

ENHANCEMENT MODE

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

90 A

1

e3

30

260

BUK625R0-40C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

158 W

ENHANCEMENT MODE

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

90 A

1

e3

30

260

PSMN017-80PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

103 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

50 A

e3

PSMN4R3-30PL,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

103 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

1

e3

BLF882SU

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK664R4-55C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

204 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BLF8G10L-160,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.