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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PMV170UN,215 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.14 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 1 A; |
| Datasheet | PMV170UN,215 Datasheet |
| In Stock | 520 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
934066752215 568-10830-6 2156-PMV170UN215-NXTR PMV170UN,215-ND NEXNXPPMV170UN,215 568-10830-2 568-10830-1 |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 1 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 1.14 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 1 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









