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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BUK763R4-30B,118 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 255 W; Operating Mode: ENHANCEMENT MODE; Maximum Time At Peak Reflow Temperature (s): 30; |
| Datasheet | BUK763R4-30B,118 Datasheet |
| In Stock | 108 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
568-6577-2-ND 568-6577-1 568-6577-2 568-6577-1-ND 568-6577-6 1727-5253-6 934060027118 1727-5253-2 568-6577-6-ND 1727-5253-1 |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 75 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 255 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | 75 A |
| Peak Reflow Temperature (C): | 245 |
| Moisture Sensitivity Level (MSL): | 1 |









