SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BLF6G20LS-110/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

29 A

BLF8G20LS-200V,115

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

BUK7Y20-30B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

59 W

ENHANCEMENT MODE

1

39.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

39.5 A

1

e3

30

260

BLF8G20LS-230VJ

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK663R5-55C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

263 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

PSMN5R0-80BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

270 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BUK762R0-40C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

333 W

ENHANCEMENT MODE

1

276 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

276 A

1

e3

30

245

BUK762R6-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

324 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BUK7105-40ATE/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

272 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

75 A

BLF6G22S-45,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

BUK653R3-30C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

204 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

e3

PSMN102-200YT/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

113 W

ENHANCEMENT MODE

1

21.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

21.5 A

BUK7E13-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

96 W

ENHANCEMENT MODE

1

58 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

58 A

e3

BUK753R4-30B,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

255 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

75 A

e3

BUK662R4-40C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

263 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BUK6209-30C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

80 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

50 A

1

e3

30

260

PSMN8R0-40PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

86 W

ENHANCEMENT MODE

1

77 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

77 A

1

e3

BUK6212-40C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

80 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

50 A

1

e3

30

260

BLF6G27-10G,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

3.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

3.5 A

PSMN022-30BL,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

41 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

30 A

1

e3

30

245

BF1107,215

NXP Semiconductors

N-CHANNEL

SINGLE

1

.01 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.01 A

1

e3

30

260

BLF6H10LS-160,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

BUK7E5R2-100E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

349 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

BLF8G22LS-270U

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

PSMN5R8-30LL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

55 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

BLF8G20LS-220U

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK7Y7R2-60EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

167 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

BUK7Y9R9-80E/CX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

195 W

ENHANCEMENT MODE

1

89 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

89 A

BUK9609-75A/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

230 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

75 A

PSMN011-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

49 W

ENHANCEMENT MODE

1

51 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

51 A

1

e3

30

260

BLF6G22LS-130/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

34 A

PSMN050-80BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

56 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

22 A

1

e3

30

245

PSMN1R3-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

121 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

100 A

1

e3

30

260

BF1105,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

.03 A

e3

BUK753R5-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

293 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

e3

BUK964R7-80E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

324 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BUK6215-75C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

128 W

ENHANCEMENT MODE

1

57 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

57 A

1

e3

30

260

BUK9520-100B,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

203 W

ENHANCEMENT MODE

1

63 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

63 A

e3

BLF8G38LS-75VU

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BF1101,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

.03 A

e3

BUK7219-55A/C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

114 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

BUK7E4R3-75C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

333 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

e3

BLF6G27-100

NXP Semiconductors

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

65 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

.16 ohm

29 A

DUAL

R-CDFM-F2

NOT APPLICABLE

SOURCE

Not Qualified

ESD PROTECTION

NOT SPECIFIED

NOT SPECIFIED

BLF6G10-160RN,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

39 A

BLF8G20LS-230VU

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BLF8G22LS-270GVJ

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BLF8G22LS-220J

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK7610-55AL,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

300 W

ENHANCEMENT MODE

1

122 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

122 A

1

e3

30

245

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.