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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BUK7E5R2-100E,127 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Drain Current (ID): 120 A; JESD-609 Code: e3; |
| Datasheet | BUK7E5R2-100E,127 Datasheet |
| In Stock | 2,589 |
| NAME | DESCRIPTION |
|---|---|
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 120 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Terminal Finish: | Tin (Sn) |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 349 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | 120 A |









