SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BLF6G27-75,112

NXP Semiconductors

N-CHANNEL

SINGLE

75 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

18 A

BLF6G27LS-75,118

NXP Semiconductors

N-CHANNEL

SINGLE

75 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

18 A

PSMN1R9-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

141 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

BLF8G09LS-270WU

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BLF882U

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

PSMN2R0-60PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

338 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

BUK752R7-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

349 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

e3

PSMN4R6-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

63.8 W

ENHANCEMENT MODE

1

70.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70.4 A

PSMN2R5-60PLQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

349 W

ENHANCEMENT MODE

1

150 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

150 A

BUK7213-40A,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

78 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

78 A

PSMN012-80PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

148 W

ENHANCEMENT MODE

1

74 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

74 A

1

e3

PSMN1R5-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

179 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

BUK7Y43-60EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

22 A

BUK763R6-40C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

203 W

ENHANCEMENT MODE

1

167 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

167 A

1

e3

30

245

BLF8G20LS-200V,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

BLF8G27LS-140VX

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

PSMN1R1-30EL,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

338 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

BUK7E07-55B,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

203 W

ENHANCEMENT MODE

1

119 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

119 A

e3

PSMN1R9-40PLQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

349 W

ENHANCEMENT MODE

1

150 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

150 A

PSMN5R6-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

60 W

ENHANCEMENT MODE

1

61 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

61 A

BUK7Y59-60EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

37 W

ENHANCEMENT MODE

1

17 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

17 A

PSMN2R0-30YLE,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

272 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN1R6-30PL,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

306 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

1

e3

PSMN3R2-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

79 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

BF1118W,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

DEPLETION MODE

1

.01 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.01 A

1

e3

30

260

BLF8G22LS-220U

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK7Y53-100B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

85 W

ENHANCEMENT MODE

1

24.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

24.8 A

1

e3

30

260

PSMN4R3-100ES,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

338 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

PSMN023-40YLCX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

25 W

ENHANCEMENT MODE

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

24 A

BLF8G38LS-75VJ

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK663R7-75C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

306 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

PSMN7R5-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

42 W

ENHANCEMENT MODE

1

56 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

56 A

1

e3

30

260

BUK7Y18-55B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

85 W

ENHANCEMENT MODE

1

47.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

47.4 A

1

e3

30

260

BLF8G22LS-200V,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

30

260

BLF8G22LS-140U

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK9Y11-30B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

59 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

59 A

1

e3

30

260

BUK962R6-40E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

263 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BUK6607-75C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

204 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BF997T/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.2 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

PSMN4R5-40PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

148 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

1

e3

BLF8G22LS-270V,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

30

260

PMZB370UNE,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.36 W

ENHANCEMENT MODE

1

.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.9 A

1

e3

30

260

BUK762R9-40E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

234 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

PMZB300XN,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.715 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

1 A

1

e3

30

260

BUK6211-75C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

158 W

ENHANCEMENT MODE

1

74 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

74 A

1

e3

30

260

BUK7E04-40A,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

198 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

198 A

e3

BUK969R0-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

137 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

BLF6G20LS-75/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

18 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.