NXP Semiconductors - PSMN2R0-30YLE,115

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PSMN2R0-30YLE,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN2R0-30YLE,115
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 272 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet PSMN2R0-30YLE,115 Datasheet
In Stock593
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 100 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 272 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 100 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
593 $0.702 $416.286

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