NXP Semiconductors - PSMN4R6-100XS,127

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PSMN4R6-100XS,127 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN4R6-100XS,127
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63.8 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet PSMN4R6-100XS,127 Datasheet
In Stock1,893
NAME DESCRIPTION
Other Names: 568-10158-ND
PSMN4R6-100XS,127-ND
934067065127
2156-PSMN4R6-100XS127-NX
568-10158
PSMN4R6100XS127
NEXNXPPSMN4R6-100XS,127
568-10158-5
Maximum Power Dissipation (Abs): 63.8 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 70.4 A
Maximum Drain Current (Abs) (ID): 70.4 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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