SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BLF7G22L-200,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

BLS7G2325L-105,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

28 A

PHB45NQ15T/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

230 W

ENHANCEMENT MODE

1

45.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

45.1 A

BUK551-100B

NXP Semiconductors

N-CHANNEL

SINGLE

NO

40 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

1.1 ohm

3 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

BUK437-400B

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.5 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

PH4330LT/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

62.5 W

ENHANCEMENT MODE

1

95.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

95.9 A

PH1825AL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

104 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

100 A

BLF7G27L-135,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

28 A

BF1201R,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.2 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

.03 A

e3

BLF1046,135

NXP Semiconductors

N-CHANNEL

SINGLE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

4.5 A

BF909WR,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1

.04 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

.04 A

e3

PHB33NQ20T/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

230 W

ENHANCEMENT MODE

1

32.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32.7 A

PMT760EN,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

6.2 W

ENHANCEMENT MODE

1

.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.9 A

BF1217WR,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.18 W

DUAL GATE, ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

PHK12NQ10T,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.9 W

ENHANCEMENT MODE

1

11.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11.6 A

2

30

260

BF909R,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1

.04 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

.04 A

e3

BLA0912-250R,112

NXP Semiconductors

N-CHANNEL

SINGLE

700 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

PMG45UN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.715 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

BF909,235

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1

.04 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

.04 A

e3

BUK436-800A

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

4 A

SINGLE

R-PSFM-T3

Not Qualified

BLF7G27LS-140,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

28 A

BUK436-200A

NXP Semiconductors

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.16 ohm

19 A

SINGLE

R-PSFM-T3

Not Qualified

PMT29EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

6 A

1

e3

30

260

MRF9582NT1

NXP Semiconductors

N-CHANNEL

SINGLE

YES

10.5 W

PLASTIC/EPOXY

AMPLIFIER

17 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.8 ohm

1.5 A

QUAD

R-PQSO-F4

1

SOURCE

Not Qualified

e3

40

260

BLF7G24L-100,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

28 A

BLF573S,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

42 A

BLL6G1214L-250,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

59 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

59 A

BLS2933-100,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

12 A

PSMN3R4-30BL,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

114 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

PSMN3R3-80ES,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

338 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

BLF8G09LS-270GWJ

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BLF6G15L-40RN,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

11 A

30

260

BUK6C2R1-55C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

300 W

ENHANCEMENT MODE

1

228 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

228 A

1

e3

30

245

BLF6G15LS-40RN,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

11 A

30

260

PSMN3R3-100PS

NXP Semiconductors

N-CHANNEL

SINGLE

NO

455 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

PSMN4R4-80BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

306 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BUK763R4-30,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

255 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

75 A

1

e3

BUK7E2R3-40C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

333 W

ENHANCEMENT MODE

1

276 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

276 A

e3

BUK7Y25-40B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

59.4 W

ENHANCEMENT MODE

1

35.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

35.3 A

1

e3

30

260

BLF6G10LS-200RN,11

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

49 A

BUK763R1-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

293 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BLF8G27LS-100V,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

30

260

BUK6E2R0-30C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

306 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

BLF6G27-100,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

29 A

BLF6G20S-45,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

13 A

BUK625R2-30C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

128 W

ENHANCEMENT MODE

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

90 A

1

e3

30

260

BUK9615-100E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

182 W

ENHANCEMENT MODE

1

66 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

66 A

1

e3

30

245

BUK724R5-30C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

157 W

ENHANCEMENT MODE

1

136 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

136 A

1

e3

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.