NXP Semiconductors - BLF6G20S-45,118

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BLF6G20S-45,118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G20S-45,118
Description N-CHANNEL; Configuration: SINGLE; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 13 A; Maximum Operating Temperature: 225 Cel;
Datasheet BLF6G20S-45,118 Datasheet
In Stock8,458
NAME DESCRIPTION
Other Names: 2156-BLF6G20S-45,118TR
934061037118
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 225 Cel
Maximum Drain Current (ID): 13 A
Maximum Drain Current (Abs) (ID): 13 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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