NXP Semiconductors - PHB45NQ15T/T3

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PHB45NQ15T/T3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHB45NQ15T/T3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 230 W; Maximum Drain Current (Abs) (ID): 45.1 A; Maximum Operating Temperature: 175 Cel;
Datasheet PHB45NQ15T/T3 Datasheet
In Stock4,463
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 230 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 45.1 A
Maximum Drain Current (Abs) (ID): 45.1 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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