NXP Semiconductors - MRF9582NT1

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MRF9582NT1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF9582NT1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10.5 W; Maximum Time At Peak Reflow Temperature (s): 40; Qualification: Not Qualified;
Datasheet MRF9582NT1 Datasheet
In Stock795
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 1.5 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 4
Maximum Power Dissipation (Abs): 10.5 W
Terminal Position: QUAD
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PQSO-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Drain-Source On Resistance: .8 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 17 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 1.5 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
795 $7.960 $6,328.200

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