NXP Semiconductors - BLF6G15LS-40RN,112

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BLF6G15LS-40RN,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G15LS-40RN,112
Description N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 30; No. of Elements: 1; Maximum Drain Current (ID): 11 A; Operating Mode: ENHANCEMENT MODE;
Datasheet BLF6G15LS-40RN,112 Datasheet
In Stock1,085
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 11 A
Maximum Drain Current (Abs) (ID): 11 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
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