Vishay Intertechnology - SI2319CDS-T1-BE3

SI2319CDS-T1-BE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI2319CDS-T1-BE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum Operating Temperature: -55 Cel; Maximum Drain Current (ID): 4.4 A;
Datasheet SI2319CDS-T1-BE3 Datasheet
In Stock31,348
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 34 ns
Maximum Drain Current (ID): 4.4 A
Maximum Pulsed Drain Current (IDM): 20 A
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 46 ns
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .077 ohm
Maximum Feedback Capacitance (Crss): 61 pF
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: IEC-61249-2-21
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