
Image shown is a representation only.
Manufacturer | Vishay Intertechnology |
---|---|
Manufacturer's Part Number | SI2319CDS-T1-BE3 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum Operating Temperature: -55 Cel; Maximum Drain Current (ID): 4.4 A; |
Datasheet | SI2319CDS-T1-BE3 Datasheet |
In Stock | 31,348 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 34 ns |
Maximum Drain Current (ID): | 4.4 A |
Maximum Pulsed Drain Current (IDM): | 20 A |
Surface Mount: | YES |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 2.5 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 46 ns |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .077 ohm |
Maximum Feedback Capacitance (Crss): | 61 pF |
JEDEC-95 Code: | TO-236AB |
Polarity or Channel Type: | P-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 40 V |
Reference Standard: | IEC-61249-2-21 |