NXP Semiconductors - BLF6G27-100,112

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BLF6G27-100,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G27-100,112
Description N-CHANNEL; Configuration: SINGLE; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 29 A; Maximum Operating Temperature: 200 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BLF6G27-100,112 Datasheet
In Stock4,856
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 29 A
Maximum Drain Current (Abs) (ID): 29 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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