NXP Semiconductors - BLL6G1214L-250,112

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BLL6G1214L-250,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLL6G1214L-250,112
Description N-CHANNEL; Configuration: SINGLE; Maximum Drain Current (Abs) (ID): 59 A; Maximum Drain Current (ID): 59 A; Maximum Operating Temperature: 200 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BLL6G1214L-250,112 Datasheet
In Stock3,986
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 59 A
Maximum Drain Current (Abs) (ID): 59 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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