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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLA0912-250R,112 |
| Description | N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 700 W; Maximum Operating Temperature: 200 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | BLA0912-250R,112 Datasheet |
| In Stock | 4,502 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: | 934063382112 |
| Maximum Power Dissipation (Abs): | 700 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 200 Cel |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |









