NXP Semiconductors - BLA0912-250R,112

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BLA0912-250R,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLA0912-250R,112
Description N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 700 W; Maximum Operating Temperature: 200 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Datasheet BLA0912-250R,112 Datasheet
In Stock4,502
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 700 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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