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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PMG45UN,115 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .715 W; Maximum Drain Current (ID): 3 A; No. of Elements: 1; |
| Datasheet | PMG45UN,115 Datasheet |
| In Stock | 2,486 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
2156-PMG45UN115 568-10790-2 568-10790-1 PMG45UN,115-ND NEXNXPPMG45UN,115 2156-PMG45UN115-NXTR-ND 2156-PMG45UN,115-ND 568-10790-6 934066614115 |
| Maximum Power Dissipation (Abs): | .715 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 3 A |
| Maximum Drain Current (Abs) (ID): | 3 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |









