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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLF8G27LS-100V,112 |
| Description | N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 30; No. of Elements: 1; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | BLF8G27LS-100V,112 Datasheet |
| In Stock | 3,786 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 225 Cel |
| Sub-Category: | FET General Purpose Power |
| Peak Reflow Temperature (C): | 260 |
| Polarity or Channel Type: | N-CHANNEL |








