NXP Semiconductors - PSMN3R3-100PS

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PSMN3R3-100PS by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN3R3-100PS
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 455 W; Maximum Drain Current (ID): 120 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet PSMN3R3-100PS Datasheet
In Stock4,879
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 455 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 120 A
Maximum Drain Current (Abs) (ID): 120 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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