NXP Semiconductors - BUK9515-60E,127

  1. Home
  2. NXP Semiconductors - BUK9515-60E,127
BUK9515-60E,127 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK9515-60E,127
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 96 W; JESD-609 Code: e3; Terminal Finish: TIN;
Datasheet BUK9515-60E,127 Datasheet
In Stock1,578
NAME DESCRIPTION
Other Names: 568-9858-5
934066475127
NEXNXPBUK9515-60E,127
BUK951560E127
2156-BUK9515-60E127-NX
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 54 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 96 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 54 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,578 - -

Popular Products

Category Top Products

FDD86102LZ by Fairchild Semiconductor

FDD86102LZ

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (ID): 8 A;
IRF540PBF by International Rectifier

IRF540PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 230 mJ; JESD-609 Code: e3;
FDS4559 by Onsemi

FDS4559

Onsemi

FDS4559 by Onsemi is a Power FET with N-Channel and P-Channel types, ideal for switching applications. It features a 60V min DS breakdown voltage, 20A max pulsed drain current, and 0.055 ohm max drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 175°C.
FDS8949-F085 by Onsemi

FDS8949-F085

Onsemi

FDS8949-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage. It features 2 elements with built-in diode for SWITCHING applications. With 20A IDM and 0.029 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C, making it ideal for high-power electronics.
BSS138 by Vishay Intertechnology

BSS138

Vishay Intertechnology

Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.
IRF9Z34NSTRLPBF by International Rectifier

IRF9Z34NSTRLPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; Additional Features: AVALANCHE RATED, HIGH RELIABILITY;
SI4946BEY-T1-GE3 by Vishay Siliconix

SI4946BEY-T1-GE3

Vishay Siliconix

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .041 ohm;
IRFR6215TRPBF by Infineon Technologies

IRFR6215TRPBF

Infineon Technologies

Infineon's IRFR6215TRPBF is a P-CHANNEL FET with 150V DS Breakdown Voltage, 44A IDM, and 0.295 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W. Suitable for surface mount with GULL WING terminals, it has an operating temp range of -55 to 175 °C.
FDS4465 by Onsemi

FDS4465

Onsemi

FDS4465 by Onsemi is a P-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 13.5A and max power dissipation of 2.5W.
SQJ469EP-T1_GE3 by Vishay Intertechnology

SQJ469EP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ469EP-T1_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 128A IDM, and 0.025 ohm RDS(ON). Ideal for power applications requiring high drain current capability in compact designs. Operating in enhancement mode, it offers efficient performance up to 175°C.
FDMS86101DC by Onsemi

FDMS86101DC

Onsemi

FDMS86101DC by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 200A IDM, and 0.0075 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 125W.
IRLML2244TRPBF by Infineon Technologies

IRLML2244TRPBF

Infineon Technologies

IRLML2244TRPBF by Infineon Technologies is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 18A Max IDM, and 0.054 ohm Max RDS(on). With a small outline package style and matte tin terminal finish, it operates b/w -55 to 150 °C, making it ideal for various power management needs.
BSC014N06NSATMA1 by Infineon Technologies

BSC014N06NSATMA1

Infineon Technologies

BSC014N06NSATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.00145 ohm RDS(on), and 400A IDM. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has an EAS of 580mJ.
SUM110P06-07L-E3 by Vishay Intertechnology

SUM110P06-07L-E3

Vishay Intertechnology

SUM110P06-07L-E3 by Vishay Intertechnology is a P-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 240A and an avalanche energy rating of 281mJ. This transistor is commonly used for switching applications in electronic circuits.
IRFH4253DTRPBF by International Rectifier

IRFH4253DTRPBF

International Rectifier

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Drain Current (ID): 35 A; Moisture Sensitivity Level (MSL): 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF7103TRPBF by International Rectifier

IRF7103TRPBF

International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE;
BS170 by Philips Semiconductors

BS170

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDD4141_F085 by Fairchild Semiconductor

FDD4141_F085

Fairchild Semiconductor

FDD4141_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, this MOSFET has 0.0123 ohm Drain-Source On Resistance.
IRLML0030TRPBF by International Rectifier

IRLML0030TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Terminals: 3; Transistor Element Material: SILICON;
IRF640 by Samsung

IRF640

Samsung

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 140 ns; Transistor Application: SWITCHING;