NXP Semiconductors - BLF6G10-200RN,112

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BLF6G10-200RN,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G10-200RN,112
Description N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 49 A;
Datasheet BLF6G10-200RN,112 Datasheet
In Stock563
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 225 Cel
Maximum Drain Current (ID): 49 A
Maximum Drain Current (Abs) (ID): 49 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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