Image shown is a representation only.
| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PSMN1R7-25YLC,115 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 164 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | PSMN1R7-25YLC,115 Datasheet |
| In Stock | 497 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
954-PSMN1R7-25YLC115 568-6723-6 2156-PSMN1R7-25YLC,115-ND 934065198115 2156-PSMN1R7-25YLC115-NXTR-ND 568-6723-1 NEXNXPPSMN1R7-25YLC,115 568-6723-2 PSMN1R725YLC115 2156-PSMN1R7-25YLC115 |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 100 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 164 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | 100 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









