NXP Semiconductors - BLS7G2933S-150,112

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BLS7G2933S-150,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLS7G2933S-150,112
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 33 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BLS7G2933S-150,112 Datasheet
In Stock1,502
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 33 A
Maximum Drain Current (Abs) (ID): 33 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 280
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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Pricing (USD)

Qty. Unit Price Ext. Price
1,502 $536.850 $806,348.700

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