SQ2318AES-T1_GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQ2318AES-T1_GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .031 ohm; Maximum Pulsed Drain Current (IDM): 32 A;
Datasheet	SQ2318AES-T1_GE3 Datasheet
In Stock	111,890

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	24 ns
Maximum Drain Current (ID):	8 A
Maximum Pulsed Drain Current (IDM):	32 A
Surface Mount:	YES
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	26.5 ns
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.031 ohm
Avalanche Energy Rating (EAS):	8 mJ
Other Names:	SQ2318AES-T1_GE3DKR SQ2318AES-T1_GE3CT SQ2318AES-T1_GE3TR
Maximum Feedback Capacitance (Crss):	46 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
111,890	-	-

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