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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLF7G22L-130,112 |
| Description | N-CHANNEL; Configuration: SINGLE; Maximum Operating Temperature: 225 Cel; Maximum Drain Current (ID): 28 A; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 28 A; |
| Datasheet | BLF7G22L-130,112 Datasheet |
| In Stock | 2,269 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
BLF7G22L-130,112-ND 934063499112 BLF7G22L130112 568-8661 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 225 Cel |
| Maximum Drain Current (ID): | 28 A |
| Maximum Drain Current (Abs) (ID): | 28 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |









